Active & Passive IC MCQs : This section focuses on the "Active & Passive IC". These Multiple Choice Questions (MCQs) should be practiced to improve the Active & Passive IC skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.
Question 1
At what potential, the substrate of a vertical pnp transistor should be kept to attain good isolation?
A. Same potential
B. Positive potential
C. Different potential
D. Negative potential
Question 2
Choose the appropriate value of diode to get a speedy diode from the given values of storage time (n) in sec and forward voltage (V γ).
A. n = 56 , V γ = 0.96
B. n = 100 , V γ = 0.92
C. n = 9 , V γ = 0.85
D. n = 53 , V γ = 0.95
Question 3
Consider a 52cm×52cm material of uniform resistivity 100Ωm and thickness 3cm. Find the area and resistance of this sheet of material.
A. 16 m2, 1.923 Ω/square
B. 8112 cm2, 1.733 Ω/square
C. 156 cm2, 33.33 Ω/square
D. 901 cm2, 3.333 Ω/square
Question 4
Determine the formula for sheet resistance (Rs).
A. R×L×W
B. R×(L×ρ)/W
C. R×(W/L)
D. R×(W×ρ)/L
Question 5
Find the application areas, where Schottky diode can be used?
A. Radio frequency
B. Power rectifier
C. Clamping diode
D. All of the mentioned
Question 6
How pinched resistor can give resistance in order of mega-ohm in a reasonably small area?
A. By increasing fabrication steps
B. By offering bulk resistance in n-region
C. By reducing conduction path
D. By limiting the thickness of are
Question 7
How the ohmic contact is formed in metal semiconductor diode? (AL-Aluminium)
A. n+ diffusion in p-region near AL lead
B. p+ diffusion in p-region near AL lead
C. n+ diffusion in n-region near AL lead
D. p+ diffusion in n-region near AL lead
Question 8
If a 25Ω diffused resistor is to be designed for an emitter resistor, determine the pattern in which it is fabricated?
A. 20mil long by 5mil wide
B. 25mil long by 1mil wide
C. 5mil long by 1mil wide
D. 16mil long by 4mil wide
Question 9
In application such as RF and IF circuits, inductor cannot be avoided. How to manage such situation?
A. Using inductors external to IC package
B. Thin film inductor spiral are used
C. Thin film hybrid microwave can be used
D. All of the mentioned
Question 10
In MOS capacitor, the preference in dielectric layer is given to Silicon Nitride (Si3N4) because
A. It makes capacitor non-polar
B. It contain a small resistance
C. It offers less processing step
D. It reduces failure mechanism
Question 11
In Schottky barrier diode, which contact has similar characteristics to that of an ordinary PN diode?
A. Ohmic contact
B. Schottky barrier contact
C. Both ohmic and Schottky barrier contact
D. None of the mentioned
Question 12
Name the process that is used to overcome the increase in collector series resistance, which occurs due to the presence of collector contact at the top of integrated transistor.
A. Buried n+ layer
B. Buried p+ layer
C. Triple diffused layer
D. Buried epitaxial layer
Question 13
Pick out the incorrect statement
A. Sheet resistance have smaller and lesser parasitic components
B. Value of resistor can be easily adjusted after fabrication
C. Resistance in the range 100kΩ possible using nichrome resistors
D. Thin film resistors are more stable
Question 14
State the correct reason for neglecting pnp transistor.
A. Increase in the series collector resistance of pnp transistor
B. Parasitic capacitance appears between collector and substrate
C. Current gain of pnp transistor is as low as 1.5 to 30
D. None of the mentioned
Question 15
The ‘buried layer’ reduces collector series resistance by providing,
A. A low resistivity current path from n-type layer to n+ contact layer
B. A low resistivity current path from p-type layer to n+ contact layer
C. A high resistivity current path from n-type layer to n+ contact layer
D. A high resistivity current path from p-type layer to n+ contact layer
Question 16
The advantage of Multi-emitter transistor is
A. To reduce fabrication steps
B. To save chip area
C. To lower design consideration
D. To provide linear output
Question 17
The capacitance of junction capacitor does not depend upon
A. Impurity concentration of p-type epitaxial layer
B. Impurity concentration of n-type epitaxial layer
C. Area of the junction
D. Voltage across the junction
Question 18
The diffusion of collector impurities in npn transistor should be small because,
A. No additional diffusion or masking steps required
B. Bandwidth is controlled by lateral diffusion of p-type impurity
C. Collector need not be kept at negative potential
D. None of the mentioned
Question 19
The flow of current in Schottky barrier diode is due to
A. Majority and Minority carriers
B. Majority carriers
C. Minority carriers
D. None of the mentioned
Question 20
The number of leads in schottky barrier diode are
A. Four
B. Three
C. Two
D. Six
Question 21
The number of square contained in the integrated resistor by diffused resistor method depend on ratio of
A. ρ/t
B. ρ×L/W
C. W/L×t
D. L/W
Question 22
What is the reason for using Lateral pnp transistor in Integrated Circuits?
A. Requires simple process control
B. Simultaneous fabrication of pnp and npn transistors
C. Provide good isolation
D. Miniaturization and cost reduction
Question 23
Which circuit is used to replace inductor in IC components?
A. RC active network
B. PN-junction diode
C. LC active network
D. None of the mentioned
Question 24
Which integrated resistor can achieve high value of sheet resistance?
A. Pinched resistor
B. Epitaxial resistor
C. Thin film resistor
D. All of the mentioned
Question 25
Which is considered to be a serious disadvantages of thin film capacitor, when Al2O3is used as dielectric.
A. Additional fabrication step required
B. It require over voltage protection
C. Higher dielectric constant value is required
D. All of the mentioned
Question 26
Which is the most striking feature in monolithic integrated circuit transistor?
A. Collector contact is present at the bottom of IC
B. Collector contact is present at the top of IC
C. Collector contact is absent
D. Collector contact is present on one of the sides of IC
Question 27
Which is used as the dielectric layer in MOS Capacitor?
A. Silicon Nitride (Si3N4)
B. Aluminium oxide (Al2O3)
C. Tantalum oxide (Ta2O5)
D. All of the mentioned
Question 28
Which method is used in the fabrication of pnp transistor?
A. Vertical substrate pnp
B. Triple diffused pnp
C. Lateral pnp
D. All of the mentioned
Question 29
Which of the following is not true about diffused resistor?
A. Limitation due to small range of resistance
B. Resistance depends upon surface geometry
C. Resistance depends on diffusion characteristic of material
D. Diffused resistors are non-economical
Question 30
Which of the following is not used as metallic film in the thin film resistor?
A. Nichrome (NiCr)
B. Tantalum (Ta)
C. Stannic oxide (SnO2)
D. Silicon dioxide (SiO2)
Question 31
Which of the following resistor is not used as an integrated resistor?
A. Poly gate resistor
B. Pinched resistor
C. Epitaxial resistor
D. Thin film resistor
Question 32
Which of the following transistor has the limitation, due to the requirement of additional fabrication steps and design consideration?
A. Vertical pnp transistor
B. Lateral pnp transistor
C. Triple diffused pnp transistor
D. Substrate pnp transistor
Question 33
Which transistor is best suitable to achieve very fast switching in digital circuits?
A. Lateral pnp transistor
B. Schottky transistor
C. Multi-emitter transistor
D. NPN transistor
Question 34
Why inductor is avoided in Integrated Circuit component?
A. They provide many losses compared to other IC components
B. IC devices are essentially two dimensions
C. Device density of IC increases
D. Fabrication process of these components are complicated
Question 35
Why monolithic IC transistor is preferred over discrete planar epitaxial transistor?
A. Due to structural difference
B. Increase in VCE (sat) and collector series resistor
C. Improvement in circuit performance
D. All of the mentioned