Field Effect Transistors (FET) MCQs : This section focuses on the "Field Effect Transistors (FET)". These Multiple Choice Questions (MCQs) should be practiced to improve the Field Effect Transistors (FET) skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.
Question 1
A MOSFET has how many terminals?
A. 2 or 3
B. 3
C. 4
D. 3 or 4
Question 2
The common-source JFET amplifier has:
A. a very high input impedance and a relatively low voltage gain
B. a high input impedance and a very high voltage gain
C. a high input impedance and a voltage gain less than 1
D. no voltage gain
Question 3
D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to overcome the loss of:
A. low output impedance
B. capacitive reactance
C. high input impedance
D. inductive reactance
Question 4
The overall input capacitance of a dual-gate D-MOSFET is lower because the devices are usually connected:
A. in parallel
B. with separate insulation
C. with separate inputs
D. in series
Question 5
When applied input voltage varies the resistance of a channel, the result is called:
A. saturization
B. polarization
C. cutoff
D. field effect
Question 6
When the JFET is no longer able to control the current, this point is called the:
A. breakdown region
B. depletion region
C. saturation point
D. pinch-off region
Question 7
When is a vertical channel E-MOSFET used?
A. for high frequencies
B. for high voltages
C. for high currents
D. for high resistances
Question 8
The transconductance curve of a JFET is a graph of:
A. IS versus VDS
B. IC versus VCE
C. ID versus VGS
D. ID × RDS
Question 9
Which type of JFET bias requires a negative supply voltage?
A. feedback
B. source
C. gate
D. voltage divider
Question 10
Which JFET configuration would connect a high-resistance signal source to a low-resistance load?
A. source follower
B. common-source
C. common-drain
D. common-gate
Question 11
When an input delta of 2 V produces a transconductance of 1.5 mS, what is the drain current delta?
A. 666 mA
B. 3 mA
C. 0.75 mA
D. 0.5 mA
Question 12
How will a D-MOSFET input impedance change with signal frequency?
A. As frequency increases input impedance increases.
B. As frequency increases input impedance is constant.
C. As frequency decreases input impedance increases.
D. As frequency decreases input impedance is constant.
Question 13
How will electrons flow through a p-channel JFET?
A. from source to drain
B. from source to gate
C. from drain to gate
D. from drain to source
Question 14
A very simple bias for a D-MOSFET is called:
A. self biasing
B. gate biasing
C. zero biasing
D. voltage-divider biasing
Question 15
The type of bias most often used with E-MOSFET circuits is:
A. constant current
B. drain-feedback
C. voltage-divider
D. zero biasing
Question 16
JFET terminal "legs" are connections to the drain, the gate, and the:
A. channel
B. source
C. substrate
D. cathode
Question 17
Which component is considered to be an "OFF" device?
A. transistor
B. JFET
C. D-MOSFET
D. E-MOSFET
Question 18
Junction Field Effect Transistors (JFET) contain how many diodes?
A. 4
B. 3
C. 2
D. 1
Question 19
IDSS can be defined as:
A. the minimum possible drain current
B. the maximum possible current with VGS held at –4 V
C. the maximum possible current with VGS held at 0 V
D. the maximum drain current with the source shorted
Question 20
In an n-channel JFET, what will happen at the pinch-off voltage?
A. the value of VDS at which further increases in VDS will cause no further increase in ID
B. the value of VGS at which further decreases in VGS will cause no further increases in ID
C. the value of VDG at which further decreases in VDG will cause no further increases in ID
D. the value of VDS at which further increases in VGS will cause no further increases in ID
Question 21
In the constant-current region, how will the IDS change in an n-channel JFET?
A. As VGS decreases ID decreases.
B. As VGS increases ID increases.
C. As VGS decreases ID remains constant.
D. As VGS increases ID remains constant.
Question 22
With the E-MOSFET, when gate input voltage is zero, drain current is:
A. at saturation
B. zero
C. IDSS
D. widening the channel
Question 23
When not in use, MOSFET pins are kept at the same potential through the use of:
A. shipping foil
B. nonconductive foam
C. conductive foam
D. a wrist strap
Question 24
When an input signal reduces the channel size, the process is called:
A. enhancement
B. substrate connecting
C. gate charge
D. depletion
Question 25
With a JFET, a ratio of output current change against an input voltage change is called:
A. transconductance
B. siemens
C. resistivity
D. gain
Question 26
What is the input impedance of a common-gate configured JFET?
A. very low
B. low
C. high
D. very high
Question 27
When VGS = 0 V, a JFET is:
A. saturated
B. an analog device
C. an open switch
D. cut off
Question 28
A "U" shaped, opposite-polarity material built near a JFET-channel center is called the:
A. gate
B. block
C. drain
D. heat sink
Question 29
With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with ID = 3 mA?
A. 6 V
B. 10 V
C. 24 V
D. 30 V