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Memory and Storage MCQ Questions & Answers

Memory and Storage MCQs : This section focuses on the "Memory and Storage". These Multiple Choice Questions (MCQs) should be practiced to improve the Memory and Storage skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.




Question 1

A 64-bit word consists of ________.

A. 4 bytes
B. 8 bytes
C. 10 bytes
D. 12 bytes

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Question 2

A 64-Mbyte SIMM is installed into a system, but when a memory test is executed, the SIMM is detected as a 32-Mbyte device. What is a possible cause?

A. The memory module was not installed properly.
B. The voltage on the memory module is incorrect.
C. The most significant address line is stuck high or low.
D. The address decoder on the SIMM is faulty.

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Question 3

A CD-R disk is created by applying heat to special chemicals on the disk and these chemicals reflect less light than the areas that are not burned, thus creating the same effect as a pit does on a regular CD.

A. TRUE
B. FALSE

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Question 4

A major disadvantage of the mask ROM is that it:

A. is time consuming to change the stored data when system requirements change
B. is very expensive to change the stored data when system requirements change
C. cannot be reprogrammed if stored data needs to be changed
D. has an extremely short life expectancy and requires frequent replacement

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Question 5

Address decoding for dynamic memory chip control may also be used for:

A. controlling refresh circuits
B. read and write control
C. chip selection and address location
D. memory mapping

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Question 6

Advantage(s) of an EEPROM over an EPROM is/are:

A. the EPROM can be erased with ultraviolet light in much less time than an EEPROM
B. the EEPROM can be erased and reprogrammed without removal from the circuit
C. the EEPROM has the ability to erase and reprogram individual words
D. the EEPROM can be erased and reprogrammed without removal from the circuit, and can erase and reprogram individual words

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Question 7

An 8-bit address code can select ________.

A. 8 locations in memory
B. 256 locations in memory
C. 65,536 locations in memory
D. 131,072 locations in memory

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Question 8

CCD stands for ________.

A. capacitor charging device
B. capacitor-capacitor drain
C. charged-capacitor device
D. charge-coupled device

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Question 9

Data is written to and read from the disk via a magnetic ________ head mechanism in the floppy drive.

A. cylinder
B. read/write
C. recordable
D. cluster

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Question 10

Describe the timing diagram of a write operation.

A. First the data is set on the data bus and the address is set, then the write pulse stores the data.
B. First the address is set, then the data is set on the data bus, and finally the read pulse stores the data.
C. First the write pulse stores the data, then the address is set, and finally the data is set on the data bus.
D. First the data is set on the data bus, then the write pulse stores the data, and finally the address is set.

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Question 11

Dynamic memory cells store a data bit in a ________.

A. diode
B. resistor
C. capacitor
D. flip-flop

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Question 12

EEPROM stands for ________.

A. encapsulated electrical programmable read-only memory
B. elementary electrical programmable read-only memory
C. electrically erasable programmable read-only memory
D. elementary erasable programmable read-only memory

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Question 13

Eight bits of digital data are normally referred to as a:

A. group.
B. byte.
C. word.
D. cell.

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Question 14

FIFO is formed by an arrangement of ________.

A. diodes
B. transistors
C. MOS cells
D. shift registers

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Question 15

How can UV erasable PROMs be recognized?

A. There is a small window on the chip.
B. They will have a small violet dot next to the #1 pin.
C. Their part number always starts with a "U", such as in U12.
D. They are not readily identifiable, since they must always be kept under a small cover.

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Question 16

How many 1K × 4 RAM chips would be required to build a 1K × 8 memory system?

A. 2
B. 4
C. 8
D. 16

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Question 17

How many 2K × 8 ROM chips would be required to build a 16K × 8 memory system?

A. 2
B. 4
C. 8
D. 16

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Question 18

How many 8 k × 1 RAMs are required to achieve a memory with a word capacity of 8 k and a word length of eight bits?

A. Eight
B. Four
C. Two
D. One

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Question 19

How many address bits are needed to select all memory locations in the 2118 16K × 1 RAM?

A. 8
B. 10
C. 14
D. 16

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Question 20

How many address bits are required for a 4096-bit memory organized as a 512 × 8 memory?

A. 2
B. 4
C. 8
D. 9

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Question 21

How many address lines would be required for a 2K × 4 memory chip?

A. 8
B. 10
C. 11
D. 12

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Question 22

How many storage locations are available when a memory device has 12 address lines?

A. 144
B. 512
C. 2048
D. 4096

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Question 23

In a DRAM, what is the state of R/W during a read operation?

A. Low
B. High
C. Hi-Z
D. None of the above

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Question 24

In general, the ________ have the smallest bit size and the ________ have the largest.

A. EEPROMs, Flash
B. SRAM, mask ROM
C. mask ROM, SRAM
D. DRAM, PROM

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Question 25

L1 is known as ________.

A. primary cache
B. secondary cache
C. DRAM
D. SRAM

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Question 26

Microprocessors and memory ICs are generally designed to drive only a single TTL load. Therefore, if several inputs are being driven from the same bus, any memory IC must be ________.

A. buffered
B. decoded
C. addressed
D. stored

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Question 27

On a CD-ROM, ________ are raised areas representing a 1.

A. mounds
B. lands
C. holes
D. pits

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Question 28

On a CD-ROM, ________ are recessed areas representing a 0.

A. mounds
B. lands
C. holes
D. pits

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Question 29

One of the most important specifications on magnetic media is the ________.

A. rotation speed
B. tracks per inch
C. data transfer rate
D. polarity reversal rate

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Question 30

ROMs retain data when the ________.

A. power is off
B. power is on
C. system is down
D. all of the above

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Question 31

Select the statement that best describes Read-Only Memory (ROM).

A. nonvolatile, used to store information that changes during system operation
B. nonvolatile, used to store information that does not change during system operation
C. volatile, used to store information that changes during system operation
D. volatile, used to store information that does not change during system operation

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Question 32

Select the statement that best describes the fusible-link PROM.

A. user-programmable, one-time programmable
B. manufacturer-programmable, one-time programmable
C. user-programmable, reprogrammable
D. manufacturer-programmable, reprogrammable

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Question 33

Suppose that a certain semiconductor memory chip has a capacity of 8K × 8. How many bytes could be stored in this device?

A. 8000
B. 64000
C. 65536
D. 8192

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Question 34

The bit capacity of a memory that has 2048 addresses and can store 8 bits at each address is ________.

A. 4096
B. 8129
C. 16358
D. 32768

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Question 35

The check sum method of testing a ROM:

A. indicates if the data in more than one memory location is incorrect.
B. provides a means for locating and correcting data errors in specific memory locations.
C. allows data errors to be pinpointed to a specific memory location.
D. simply indicates that the contents of the ROM are incorrect.

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Question 36

The condition occurring when two or more devices try to write data to a bus simultaneously is called ________.

A. address decoding
B. bus contention
C. bus collisions
D. address multiplexing

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Question 37

The ideal memory ________.

A. has high storage capacity
B. is nonvolatile
C. has in-system read and write capacity
D. has all of the above characteristics

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Question 38

The location of a unit of data in a memory array is called its ________.

A. storage
B. RAM
C. address
D. data

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Question 39

The main advantage of semiconductor RAM is its ability to:

A. retain stored data when power is interrupted or turned off
B. be written to and read from rapidly
C. be randomly accessed
D. be sequentially accessed

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Question 40

The mask ROM is ________.

A. permanently programmed during the manufacturing process
B. volatile
C. easy to reprogram
D. extremely expensive

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Question 41

The mask ROM is ________.

A. MOS technology
B. diode technology
C. resistor-diode technology
D. DROM technology

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Question 42

The periodic recharging of DRAM memory cells is called ________.

A. multiplexing
B. bootstrapping
C. refreshing
D. flashing

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Question 43

The reason the data outputs of most ROM ICs are tristate outputs is to:

A. allow for three separate data input lines.
B. allow the bidirectional flow of data between the bus lines and the ROM registers.
C. permit the connection of many ROM chips to a common data bus.
D. isolate the registers from the data bus during read operations.

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Question 44

The refresh period for capacitors used in DRAMs is ________.

A. 2 ms
B. 2 s
C. 64 ms
D. 64 s

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Question 45

The smallest unit of binary data is the ________.

A. bit
B. nibble
C. byte
D. word

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Question 46

The storage element for a static RAM is the ________.

A. diode
B. resistor
C. capacitor
D. flip-flop

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Question 47

The time from the beginning of a read cycle to the end of tACS or tAA is referred to as:

A. access time
B. data hold
C. read cycle time
D. write enable time

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Question 48

To which pin on the RAM chip does the address decoder connect in order to signal which memory chip is being accessed?

A. The address input
B. The output enable
C. The chip enable
D. The data input

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Question 49

Typically, how often is DRAM refreshed?

A. 2 to 8 ms
B. 4 to 16 ms
C. 8 to 16 s
D. 1 to 2 s

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Question 50

What are the typical values of tOE?

A. 10 to 20 ns for bipolar
B. 25 to 100 ns for NMOS
C. 12 to 50 ns for CMOS
D. All of the above

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Question 51

What does the term "random access" mean in terms of memory?

A. Addresses must be accessed in a specific order.
B. Any address can be accessed in any order.

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Question 52

What is a major disadvantage of RAM?

A. Its access speed is too slow.
B. Its matrix size is too big.
C. It is volatile.
D. High power consumption

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Question 53

What is a multitap digital delay line?

A. a series of inverter gates with RC circuits between each one
B. a series of inverter gates with RL circuits between each one
C. a series of NAND gates with RC circuits between each one
D. a series of NAND gates with RL circuits between each one

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Question 54

What is the bit storage capacity of a ROM with a 1024 × 8 organization?

A. 1024
B. 2048
C. 4096
D. 8192

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Question 55

What is the computer main memory?

A. Hard drive and RAM
B. CD-ROM and hard drive
C. RAM and ROM
D. CMOS and hard drive

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Question 56

What is the difference between static RAM and dynamic RAM?

A. Static RAM must be refreshed, dynamic RAM does not.
B. There is no difference.
C. Dynamic RAM must be refreshed, static RAM does not.

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Question 57

What is the maximum time required before a dynamic RAM must be refreshed?

A. 2 ms
B. 4 ms
C. 8 ms
D. 10 ms

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Question 58

What is the principal advantage of using address multiplexing with DRAM memory?

A. reduced memory access time
B. reduced requirement for constant refreshing of the memory contents
C. reduced pin count and decrease in package size
D. It eliminates the requirement for a chip-select input line, thereby reducing the pin count.

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Question 59

What part of a Flash memory architecture manages all chip functions?

A. I/O pins
B. floating-gate MOSFET
C. command code
D. program verify code

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Question 60

What two functions does a DRAM controller perform?

A. address multiplexing and data selection
B. address multiplexing and the refresh operation
C. data selection and the refresh operation
D. data selection and CPU accessing

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Question 61

When a RAM module passes the checkerboard test it is:

A. able to read and write only 1s.
B. faulty.
C. probably good.
D. able to read and write only 0s.

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Question 62

Which is not a hard disk performance parameter?

A. Seek time
B. Break time
C. Latency period
D. Access time

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Question 63

Which is not a magnetic storage device?

A. Magnetic disk
B. Magnetic tape
C. Magneto-optical disk
D. Optical disk

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Question 64

Which is not a removable drive?

A. Zip
B. Jaz
C. Hard
D. SuperDisk

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Question 65

Which is not part of a hard disk drive?

A. Spindle
B. Platter
C. Read/write head
D. Valve

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Question 66

Which is/are the basic refresh mode(s) for dynamic RAM?

A. Burst refresh
B. Distributed refresh
C. Open refresh
D. Burst refresh and distributed refresh

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Question 67

Which of the following best describes EPROMs?

A. EPROMs can be programmed only once.
B. EPROMs can be erased by UV.
C. EPROMs can be erased by shorting all inputs to the ground.
D. All of the above.

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Question 68

Which of the following best describes random-access memory (RAM)?

A. a type of memory in which access time depends on memory location
B. a type of memory that can be written to only once but can be read from an infinite number of times
C. a type of memory in which access time is the same for each memory location
D. mass memory

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Question 69

Which of the following best describes static memory devices?

A. memory devices that are magnetic in nature and do not require constant refreshing
B. memory devices that are magnetic in nature and require constant refreshing
C. semiconductor memory devices in which stored data will not be retained with the power applied unless constantly refreshed
D. semiconductor memory devices in which stored data is retained as long as power is applied

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Question 70

Which of the following best describes volatile memory?

A. memory that retains stored information when electrical power is removed
B. memory that loses stored information when electrical power is removed
C. magnetic memory
D. nonmagnetic

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Question 71

Which of the following describes the action of storing a bit of data in a mask ROM?

A. A 1 is stored in a bipolar cell by opening the base connection to the address line.
B. A 0 is stored in a bipolar cell by shorting the base connection to the address line.
C. A 1 is stored by connecting the gate of a MOS cell to the address line.
D. A 0 is stored by connecting the gate of a MOS cell to the address line.

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Question 72

Which of the following faults will the checkerboard pattern test for in RAM?

A. Short between adjacent cells
B. Ability to store both 0s and 1s
C. Dynamically introduced errors between cells
D. All of the above

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Question 73

Which of the following is normally used to initialize a computer system's hardware?

A. Bootstrap memory
B. Volatile memory
C. External mass memory
D. Static memory

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Question 74

Which of the following is not a flash memory mode or operation?

A. Burst
B. Read
C. Erase
D. Programming

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Question 75

Which of the following is NOT a type of memory?

A. RAM
B. ROM
C. FPROM
D. EEPROM

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Question 76

Which of the following is one of the basic characteristics of DRAMs?

A. DRAMs must have a constantly changing input.
B. DRAMs must be periodically refreshed in order to be able to retain data.
C. DRAMs have a broader "dynamic" storage range than other types of memories.
D. DRAMs are simpler devices than other types of memories.

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Question 77

Which of the following memories is volatile?

A. ROM
B. EROM
C. RAM
D. Flash

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Question 78

Which of the following memories uses a MOS capacitor as its memory cell?

A. SRAM
B. DRAM
C. ROM
D. FIFO

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Question 79

Which of the following RAM timing parameters determine its operating speed?

A. tACC
B. tAA and tACS
C. tCO and tOD
D. tRC and tWC

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Question 80

Which type of ROM can be erased by an electrical signal?

A. ROM
B. mask ROM
C. EPROM
D. EEPROM

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Question 81

Which type of ROM can be erased by UV light?

A. ROM
B. mask ROM
C. EPROM
D. EEPROM

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Question 82

Which type of ROM has to be custom built by the factory?

A. ROM
B. mask ROM
C. EPROM
D. EEPROM

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Question 83

Why are ROMs called nonvolatile memory?

A. They lose memory when power is removed.
B. They do not lose memory when power is removed.

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Question 84

Why do most dynamic RAMs use a multiplexed address bus?

A. It is the only way to do it.
B. to make it faster
C. to keep the number of pins on the chip to a minimum

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Question 85

Why is a refresh cycle necessary for a dynamic RAM?

A. to clear the flip-flops
B. to set the flip-flops
C. The refresh cycle discharges the capacitor cells.
D. The refresh cycle keeps the charge on the capacitor cells.

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