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Semiconductor Principles MCQ Questions & Answers

Semiconductor Principles MCQs : This section focuses on the "Semiconductor Principles". These Multiple Choice Questions (MCQs) should be practiced to improve the Semiconductor Principles skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.

Question 1

Minority carriers are many times activated by:

A. heat
B. pressure
C. dopants
D. forward bias

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Question 2

Silicon atoms combine into an orderly pattern called a:

A. covalent bond
B. crystal
C. semiconductor
D. valence orbit

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Question 3

What is a type of doping material?

A. extrinsic semiconductor material
B. pentavalent material
C. n-type semiconductor
D. majority carriers

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Question 4

In "p" type material, minority carriers would be:

A. holes
B. dopants
C. slower
D. electrons

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Question 5

Electron pair bonding occurs when atoms:

A. lack electrons
B. share holes
C. lack holes
D. share electrons

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Question 6

A commonly used pentavalent material is:

A. arsenic
B. boron
C. gallium
D. neon

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Question 7

What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

A. conductivity
B. resistance
C. power
D. all of the above

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Question 8

What causes the depletion region?

A. doping
B. diffusion
C. barrier potential
D. ions

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Question 9

If conductance increases as temperature increases, this is known as a:

A. positive coefficient
B. negative current flow
C. negative coefficient
D. positive resistance

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Question 10

Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?

A. 0.2
B. 0.3
C. 0.7
D. 0.8

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Question 11

Which semiconductor material is made from coal ash?

A. germanium
B. silicon
C. tin
D. carbon

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Question 12

Solid state devices were first manufactured during:

A. World War 2
B. 1904
C. 1907
D. 1960

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Question 13

When is a P-N junction formed?

A. in a depletion region
B. in a large reverse biased region
C. the point at which two opposite doped materials come together
D. whenever there is a forward voltage drop

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Question 14

Which of the following cannot actually move?

A. majority carriers
B. ions
C. holes
D. free electrons

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Question 15

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

A. 1
B. 2
C. 4
D. 6

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Question 16

A P-N junction mimics a closed switch when it:

A. has a low junction resistance
B. is reverse biased
C. cannot overcome its barrier voltage
D. has a wide depletion region

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Question 17

When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?

A. energy gap
B. hole
C. electron-hole pair
D. recombination

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Question 18

Ionization within a P-N junction causes a layer on each side of the barrier called the:

A. junction
B. depletion region
C. barrier voltage
D. forward voltage

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Question 19

What can a semiconductor sense?

A. magnetism
B. temperature
C. pressure
D. all of the above

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Question 20

Elements with 1, 2, or 3 valence electrons usually make excellent:

A. conductors
B. semiconductors
C. insulators
D. neutral

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Question 21

How many valence electrons are in every semiconductor material?

A. 1
B. 2
C. 3
D. 4

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Question 22

Which material may also be considered a semiconductor element?

A. carbon
B. ceramic
C. mica
D. argon

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Question 23

When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

A. 1949, William Schockley
B. 1955, Walter Bratten
C. 1959, Robert Noyce
D. 1960, John Bardeen

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Question 24

What is an energy gap?

A. the space between two orbital shells
B. the energy equal to the energy acquired by an electron passing a 1 V electric field
C. the energy band in which electrons can move freely
D. an energy level at which an electron can exist

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Question 25

In "n" type material, majority carriers would be:

A. holes
B. dopants
C. slower
D. electrons

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Question 26

What is the most significant development in electronics since World War II?

A. the development of color TV
B. the development of the diode
C. the development of the transistor
D. the development of the TRIAC

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