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Semiconductor Principles MCQ Questions & Answers

Semiconductor Principles MCQs : This section focuses on the "Semiconductor Principles". These Multiple Choice Questions (MCQs) should be practiced to improve the Semiconductor Principles skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.

Question 1

Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?

A. 0.2
B. 0.3
C. 0.7
D. 0.8

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Question 2

How many valence electrons are in every semiconductor material?

A. 1
B. 2
C. 3
D. 4

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Question 3

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

A. 1
B. 2
C. 4
D. 6

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Question 4

Solid state devices were first manufactured during:

A. World War 2
B. 1904
C. 1907
D. 1960

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Question 5

When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

A. 1949, William Schockley
B. 1955, Walter Bratten
C. 1959, Robert Noyce
D. 1960, John Bardeen

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Question 6

What can a semiconductor sense?

A. magnetism
B. temperature
C. pressure
D. all of the above

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Question 7

What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

A. conductivity
B. resistance
C. power
D. all of the above

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Question 8

What is an energy gap?

A. the space between two orbital shells
B. the energy equal to the energy acquired by an electron passing a 1 V electric field
C. the energy band in which electrons can move freely
D. an energy level at which an electron can exist

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Question 9

Which material may also be considered a semiconductor element?

A. carbon
B. ceramic
C. mica
D. argon

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Question 10

Which semiconductor material is made from coal ash?

A. germanium
B. silicon
C. tin
D. carbon

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Question 11

In "n" type material, majority carriers would be:

A. holes
B. dopants
C. slower
D. electrons

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Question 12

In "p" type material, minority carriers would be:

A. holes
B. dopants
C. slower
D. electrons

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Question 13

Minority carriers are many times activated by:

A. heat
B. pressure
C. dopants
D. forward bias

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Question 14

Ionization within a P-N junction causes a layer on each side of the barrier called the:

A. junction
B. depletion region
C. barrier voltage
D. forward voltage

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Question 15

Which of the following cannot actually move?

A. majority carriers
B. ions
C. holes
D. free electrons

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Question 16

A P-N junction mimics a closed switch when it:

A. has a low junction resistance
B. is reverse biased
C. cannot overcome its barrier voltage
D. has a wide depletion region

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Question 17

What causes the depletion region?

A. doping
B. diffusion
C. barrier potential
D. ions

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Question 18

What is a type of doping material?

A. extrinsic semiconductor material
B. pentavalent material
C. n-type semiconductor
D. majority carriers

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Question 19

A commonly used pentavalent material is:

A. arsenic
B. boron
C. gallium
D. neon

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Question 20

Elements with 1, 2, or 3 valence electrons usually make excellent:

A. conductors
B. semiconductors
C. insulators
D. neutral

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Question 21

If conductance increases as temperature increases, this is known as a:

A. positive coefficient
B. negative current flow
C. negative coefficient
D. positive resistance

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Question 22

When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?

A. energy gap
B. hole
C. electron-hole pair
D. recombination

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Question 23

Electron pair bonding occurs when atoms:

A. lack electrons
B. share holes
C. lack holes
D. share electrons

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Question 24

What is the most significant development in electronics since World War II?

A. the development of color TV
B. the development of the diode
C. the development of the transistor
D. the development of the TRIAC

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Question 25

Silicon atoms combine into an orderly pattern called a:

A. covalent bond
B. crystal
C. semiconductor
D. valence orbit

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Question 26

When is a P-N junction formed?

A. in a depletion region
B. in a large reverse biased region
C. the point at which two opposite doped materials come together
D. whenever there is a forward voltage drop

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