Semiconductor Principles MCQs : This section focuses on the "Semiconductor Principles". These Multiple Choice Questions (MCQs) should be practiced to improve the Semiconductor Principles skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.
Question 1
Minority carriers are many times activated by:
A. heat
B. pressure
C. dopants
D. forward bias
Question 2
Silicon atoms combine into an orderly pattern called a:
A. covalent bond
B. crystal
C. semiconductor
D. valence orbit
Question 3
What is a type of doping material?
A. extrinsic semiconductor material
B. pentavalent material
C. n-type semiconductor
D. majority carriers
Question 4
In "p" type material, minority carriers would be:
A. holes
B. dopants
C. slower
D. electrons
Question 5
Electron pair bonding occurs when atoms:
A. lack electrons
B. share holes
C. lack holes
D. share electrons
Question 6
A commonly used pentavalent material is:
A. arsenic
B. boron
C. gallium
D. neon
Question 7
What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?
A. conductivity
B. resistance
C. power
D. all of the above
Question 8
What causes the depletion region?
A. doping
B. diffusion
C. barrier potential
D. ions
Question 9
If conductance increases as temperature increases, this is known as a:
A. positive coefficient
B. negative current flow
C. negative coefficient
D. positive resistance
Question 10
Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?
A. 0.2
B. 0.3
C. 0.7
D. 0.8
Question 11
Which semiconductor material is made from coal ash?
A. germanium
B. silicon
C. tin
D. carbon
Question 12
Solid state devices were first manufactured during:
A. World War 2
B. 1904
C. 1907
D. 1960
Question 13
When is a P-N junction formed?
A. in a depletion region
B. in a large reverse biased region
C. the point at which two opposite doped materials come together
D. whenever there is a forward voltage drop
Question 14
Which of the following cannot actually move?
A. majority carriers
B. ions
C. holes
D. free electrons
Question 15
Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
A. 1
B. 2
C. 4
D. 6
Question 16
A P-N junction mimics a closed switch when it:
A. has a low junction resistance
B. is reverse biased
C. cannot overcome its barrier voltage
D. has a wide depletion region
Question 17
When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?
A. energy gap
B. hole
C. electron-hole pair
D. recombination
Question 18
Ionization within a P-N junction causes a layer on each side of the barrier called the:
A. junction
B. depletion region
C. barrier voltage
D. forward voltage
Question 19
What can a semiconductor sense?
A. magnetism
B. temperature
C. pressure
D. all of the above
Question 20
Elements with 1, 2, or 3 valence electrons usually make excellent:
A. conductors
B. semiconductors
C. insulators
D. neutral
Question 21
How many valence electrons are in every semiconductor material?
A. 1
B. 2
C. 3
D. 4
Question 22
Which material may also be considered a semiconductor element?
A. carbon
B. ceramic
C. mica
D. argon
Question 23
When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:
A. 1949, William Schockley
B. 1955, Walter Bratten
C. 1959, Robert Noyce
D. 1960, John Bardeen
Question 24
What is an energy gap?
A. the space between two orbital shells
B. the energy equal to the energy acquired by an electron passing a 1 V electric field
C. the energy band in which electrons can move freely
D. an energy level at which an electron can exist
Question 25
In "n" type material, majority carriers would be:
A. holes
B. dopants
C. slower
D. electrons
Question 26
What is the most significant development in electronics since World War II?
A. the development of color TV
B. the development of the diode
C. the development of the transistor
D. the development of the TRIAC