VLSI - Area Capacitance MCQs : This section focuses on the "VLSI - Area Capacitance". These Multiple Choice Questions (MCQs) should be practiced to improve the VLSI - Area Capacitance skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.
Question 1
A feature size square has ___________
A. L > W
B. W > L
C. L = W
D. L > d
Question 2
Area capacitance of diffusion region of 2 micron technology is _____ pF X 10(-4) (micrometer)2.
A. 2
B. 2.75
C. 3.75
D. 4.75
Question 3
Conducting layer is separated from substrate using ____________
A. dielectric layer
B. silicon layer
C. metal layer
D. diffusion layer
Question 4
Gate to channel capacitance of 5 micron technology is _____ pF X 10(-4) (micrometer)2.
A. 1
B. 2
C. 4
D. 0.4
Question 5
Relative area for L = 20λ and W = 3λ is?
A. 10
B. 15
C. Jan-15
D. 01-Oct
Question 6
What is the delay unit of 1.2 micron technology?
A. 0.064 nsec
B. 0.0064 nsec
C. 0.046 nsec
D. 0.0046 nsec
Question 7
What is the delay unit of 5 micron technology?
A. 1 nsec
B. 0.1 nsec
C. 0.01 nsec
D. 1 sec
Question 8
What is the desired or safe delay value for 5 micron technology?
A. 0.3 nsec
B. 0.5 nsec
C. 0.1 nsec
D. 0.2 nsec
Question 9
What is the relative capacitance of diffusion region of 5 micron technology?
A. 1
B. 0.25
C. 1.25
D. 2
Question 10
What is the standard square Cg value of a 1.2 micron technology?
A. 0.01 pF
B. 0.0023 pF
C. 0.023 pF
D. 0.23 pF
Question 11
What is the transition point of an inverter?
A. Vdd
B. 0.5 Vdd
C. 0.25 Vdd
D. 2 Vdd
Question 12
What is the value of gate capacitance?
A. 0.25 square Cg
B. 1 square Cg
C. 1.25 square Cg
D. 1.5 square Cg