DAPZOI
Home Ask MCQ Quiz Topics Login




MOS Transistors - VLSI MCQs

MOS Transistors MCQ : Here you will find MCQ Questions related to "MOS Transistors" in VLSI. These MOS Transistors MCQ Questions Will help you to improve your VLSI knowledge and will prepare you for various Examinations like Competitive Exams, Placements, Interviews and other Entrance Exmaniations.




Question 1

How many layers MOS structure contains?

A. 1
B. 2
C. 3
D. 4

View Answer


Question 2

The thickness of dielectric material (SiO2) is usually between ?

A. 10 nm and 50 nm
B. 15 nm and 50 nm
C. 5 nm and 50 nm
D. 20 nm and 50 nm

View Answer


Question 3

Which of the following is correct formula of Mass Action Law?

A. z.p=(n^2)i
B. n.p=(n^2)i
C. f.p=(n^2)i
D. n.q=(n^2)i

View Answer


Question 4

In Mass Action Law, n stands for?

A. n is carrier concentration of holes
B. n is intrinsic carrier concentration of Silicon
C. n is carrier concentration of electrons
D. All of the above

View Answer


Question 5

The band gap between conduction band and valance band is?

A. 1.5eV
B. 0.5eV
C. 1.0eV
D. 1.1eV

View Answer


Question 6

The potential difference between conduction band and free space is called?

A. semiconductor
B. fermi potential
C. work function
D. electron affinity

View Answer


Question 7

nMOS devices are formed in ____________

A. p-type substrate of high doping level
B. n-type substrate of low doping level
C. p-type substrate of moderate doping level
D. n-type substrate of high doping level

View Answer


Question 8

Source and drain in nMOS device are isolated by ____________

A. a single diode
B. two diodes
C. three diodes
D. four diodes

View Answer


Question 9

In MOS transistors _______________ is used for their gate.

A. polysilicon
B. metal
C. silicon-di-oxide
D. gallium

View Answer


Question 10

The gate region consists of ____________

A. insulating layer
B. lower metal layer
C. p type layer
D. conducting layer

View Answer