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MOS Transistors - VLSI MCQs

MOS Transistors MCQ : Here you will find MCQ Questions related to "MOS Transistors" in VLSI. These MOS Transistors MCQ Questions Will help you to improve your VLSI knowledge and will prepare you for various Examinations like Competitive Exams, Placements, Interviews and other Entrance Exmaniations.

Question 1

How many layers MOS structure contains?

A. 1
B. 2
C. 3
D. 4

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Question 2

The thickness of dielectric material (SiO2) is usually between ?

A. 10 nm and 50 nm
B. 15 nm and 50 nm
C. 5 nm and 50 nm
D. 20 nm and 50 nm

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Question 3

Which of the following is correct formula of Mass Action Law?

A. z.p=(n^2)i
B. n.p=(n^2)i
C. f.p=(n^2)i
D. n.q=(n^2)i

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Question 4

In Mass Action Law, n stands for?

A. n is carrier concentration of holes
B. n is intrinsic carrier concentration of Silicon
C. n is carrier concentration of electrons
D. All of the above

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Question 5

The band gap between conduction band and valance band is?

A. 1.5eV
B. 0.5eV
C. 1.0eV
D. 1.1eV

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Question 6

The potential difference between conduction band and free space is called?

A. semiconductor
B. fermi potential
C. work function
D. electron affinity

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Question 7

nMOS devices are formed in ____________

A. p-type substrate of high doping level
B. n-type substrate of low doping level
C. p-type substrate of moderate doping level
D. n-type substrate of high doping level

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Question 8

Source and drain in nMOS device are isolated by ____________

A. a single diode
B. two diodes
C. three diodes
D. four diodes

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Question 9

In MOS transistors _______________ is used for their gate.

A. polysilicon
B. metal
C. silicon-di-oxide
D. gallium

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Question 10

The gate region consists of ____________

A. insulating layer
B. lower metal layer
C. p type layer
D. conducting layer

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