Power Diodes MCQs : This section focuses on the "Power Diodes" in Power Electronics. These Multiple Choice Questions (MCQs) should be practiced to improve the Power Electronics skills required for various interviews (campus interview, walk-in interview, company interview), placement, entrance exam and other competitive examinations.
A ___________ is a type of diode that is commonly used in power electronics circuits
A. power transistors
B. diode circuit
C. power diode
D. gating circuits
Explanation: A power diode is a type of diode that is commonly used in power electronics circuits.
A power diode has _______________.
Explanation: A power diode has two-terminals and conducts current in one direction.
Diodes are the simplest semiconductor device having only two layers, two terminals, and one junction.
C. Can be true or false
D. Can not say
Explanation: Diodes are the simplest semiconductor device having only two layers, two terminals, and one junction.
The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the?
D. None of the above
Explanation: The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the anode and the other side lead joining the n-type is called the cathode.
The thickness of the space charge region ____________ with a ______________ in doping concentration.
A. increases, increases
B. decrease, increases
C. decrease, decrease
D. increases, decrease
Explanation: The thickness of the space charge region increases with a decrease in doping concentration.
An ideal power diode must have
A. low forward current carrying capacity
B. large reverse breakdown voltage
C. high ohmic junction resistance
D. high reverse recovery time
Explanation: Large reverse breakdown voltage is desirable whereas others will increases the losses.
The V-I Characteristics of the diode lie in the
A. 1st & 3rd quadrant
B. 1st and 2nd quadrant
C. 2nd & 3rd quadrant
D. Only in the 1st quadrant
Explanation: First in the forward region & Third in the reverse biased mode.
If V & I are the forward voltage & current respectively, then the power loss across the diode would be?
A. V + I
B. V - I
C. V * I
D. V / I
Explanation: Simply power (P) is voltage into current i.e. VI
In the equilibrium state the barrier, potential across a unbiased germanium diode is __________
A. 0.8 V
B. 0.5 V
C. 0.9 V
D. 0.3 V
Explanation: Barrier potential is due to the charges that establish an electric field across the two junctions.
Power diodes are also similar to regular diodes.
C. Can be yes or no
D. Can not say
Explanation: Yes, Power diodes are also similar to regular diodes, although they vary slightly in their construction.